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Regrowth of GaAs quantum wells on GaAs liftoff films 'van der Waals bonded' to silicon substrates

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6 Author(s)
Yablonovitch, E. ; Navesink Res. Center, Bellcore, Red Bank, NJ, USA ; Kash, K. ; Gmitter, T.J. ; Florez, L.T.
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The authors report the first epitaxial regrowth on lifted-off large-area micron-thick single-crystal GaAs films bonded by surface tension (van der Waals) forces to a foreign substrate. GaAs quantum wells grown by MOCVD on a GaAs film which had been van der Waals bonded to an Si substrate showed linewidths and luminescence efficiencies comparable to those grown directly on GaAs substrates.<>

Published in:

Electronics Letters  (Volume:25 ,  Issue: 2 )