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The increasing integration of power electronic circuit modules together with the continuing growth in power density, switching speed and frequency have resulted in a close coupling between electromagnetic, thermal and mechanical components and interconnections and a consequent increase in undesirable side effects. The switching capability of modern semiconductor devices (MOSFET, IGBT, MCT etc) results in voltage and current variations (dV/dt, dl/dt) reaching values in the range of V/ns and an A/ns. These large transient phenomena induce parasitic currents and radiated emissions. Computational and numerical approaches hold the promise of accurately predicting these undesirable phenomena.