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Modelling and simulation of power converters using the FDTD-SPICE approach

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2 Author(s)
Felic, G. ; Dept. of Electr. & Electron. Eng., Melbourne Univ., Vic., Australia ; Evans, R.

The increasing integration of power electronic circuit modules together with the continuing growth in power density, switching speed and frequency have resulted in a close coupling between electromagnetic, thermal and mechanical components and interconnections and a consequent increase in undesirable side effects. The switching capability of modern semiconductor devices (MOSFET, IGBT, MCT etc) results in voltage and current variations (dV/dt, dl/dt) reaching values in the range of V/ns and an A/ns. These large transient phenomena induce parasitic currents and radiated emissions. Computational and numerical approaches hold the promise of accurately predicting these undesirable phenomena.

Published in:

Electromagnetic Compatibility, 2003. EMC '03. 2003 IEEE International Symposium on  (Volume:1 )

Date of Conference:

11-16 May 2003