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CMOS RF amplifier and mixer circuits utilizing complementary Characteristics of parallel combined NMOS and PMOS devices

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3 Author(s)
Ilku Nam ; Dept. of Electr. Eng. & Comput. Sci., Korea Adv. Inst. of Sci. & Technol., Daejon, South Korea ; Bonkee Kim ; Kwyro Lee

Design and chip fabrication results for complementary RF circuit topologies that utilize the complementary RF characteristics of both NMOS and PMOS field-effect-transistor devices combined in parallel way are reported, which can inherently provide single-ended differential signal-processing capability, requiring neither baluns, nor differential signal generating/combining circuits. The proposed complementary CMOS parallel push-pull (CCPP) amplifier gives an order of magnitude improvement in IP2 than an NMOS common-source amplifier and single-balanced CCPP resistive mixer, which functions effectively as a double-balanced one, provides more than an order of magnitude better linearity in IP2, and similar order of magnitude better local oscillator (LO)-IF and LO-RF isolations than NMOS counterparts.

Published in:

Microwave Theory and Techniques, IEEE Transactions on  (Volume:53 ,  Issue: 5 )