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In this work, a new technique to implement the transfer function of polyphase filter with CMOS active components is proposed and analyzed. In the proposed polyphase filter structure, the currents mirrored from capacitors and the transistors in a single-stage are used to realize high-pass and low-pass functions, respectively. The multistage structure expands the frequency bandwidth to more than 20 MHz. Furthermore, a constant-gm bias circuit is employed to decrease the sensitivity of image rejection to temperature and process variations. HSPICE simulations are performed to confirm the performance. With the current-mode operation, the low-voltage version of proposed active polyphase filters was designed. It can be operated at 1-V power supply with similar performance but with only 50% of the power dissipation of the normal-voltage version. The proposed four-stage polyphase filter is fabricated in 0.25-μm CMOS 1P5M technology. The measured image rejection ratio is higher than -48 dB at frequencies of 6.1 MHz∼30 MHz. The measured voltage gain is 6.6 dB at 20 MHz and IIP3 is 8 dBm. The power dissipation is 11 mW at a supplied voltage of 2.5 V and the active chip area is 1162×813 μm2.