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Turn-on speed is the main concern for an on-chip electrostatic discharge (ESD) protection device, especially in the nanoscale CMOS processes with ultrathin gate oxide. A novel dummy-gate-blocking silicon-controlled rectifier (SCR) device employing a substrate-triggered technique is proposed to improve the turn-on speed of an SCR device for using in an on-chip ESD protection circuit to effectively protect the much thinner gate oxide. The fabrication of the proposed SCR device with dummy-gate structure is fully process-compatible with general CMOS process, without using an extra mask layer or adding process steps. From the experimental results in a 0.25-μm CMOS process with a gate-oxide thickness of ∼50 Å, the switching voltage, turn-on speed, turn-on resistance, and charged-device-model ESD levels of the SCR device with dummy-gate structure have been greatly improved, as compared to the normal SCR with shallow trench isolation structure.