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New device structure using array transistors and flexible U-grooves suitable for 18-V, high-performance SOI complementary bipolar LSIs

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8 Author(s)
Tamaki, Y. ; Micro Device Div., Hitachi Ltd., Tokyo, Japan ; Tsuji, K. ; Otani, O. ; Nonami, H.
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We have developed a new device structure suitable for high-performance and high-power mixed signal large scale integrations (LSIs) using 0.35-μm SOI complementary bipolar transistors. The new structure is composed of array transistors for various operating currents and flexible U-groove (trench) layout for high-power transistors. Thermal simulation results showed that the thermal resistance could be reduced by 40% by using the flexible U-groove layout. Test structure measurements showed that the maximum operating currents of a double polysilicon self-aligned NPN transistor were improved by 2 and 3.5 times by using ballasting resistors and ballasting resistors with flexible U-groove layout, respectively. The effects of the transistor structure on the thermal resistance and the maximum operating current were discussed.

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Semiconductor Manufacturing, IEEE Transactions on  (Volume:18 ,  Issue: 2 )