Referenced Items are not available for this document.
This paper demonstrates a novel RFCMOS process monitoring test structure. Outstanding agreement in dc and radio frequency (RF) characteristics has been observed between conventional test structure and the new process monitoring test structure for MOSFET with good correlations in measured capacitances also noted for metal-insulator-metal capacitor and MOS varactor. Possible process monitoring test structure is also suggested as a reference benchmarking indicator for interconnects.
Published in:
Semiconductor Manufacturing, IEEE Transactions on
(Volume:18
,
Issue:
2
)
Date of Publication: May 2005
- Page(s):
- 246 - 254
- ISSN :
- 0894-6507
- INSPEC Accession Number:
- 8443065
- Digital Object Identifier :
- 10.1109/TSM.2005.845095
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 09 May 2005
- Issue Date :
- May 2005
- Sponsored by :
- IEEE Components, Packaging and Manufacturing Technology Society
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