Referenced Items are not available for this document.
Thermal analysis of microwave power GaAs device chips has been presented that features analytical simplicity yet gives quantitative evaluation of thermal reduction effects of two kinds of chip peripheral structures, via-holes and bumps. To calculate Tmax (maximum temperature) and Rth (thermal resistance), the Laplace equation has been solved for a basic chip model under boundary conditions appropriate to peripheral structures. The chip model consisted of three layers features having heat sources at interface of layer 2 and 3. An approximate method for the analysis of field effect transistor (FET) unit with bumps has been newly proposed. A good agreement has been found between the calculated and measured Rth and its reduction effect, verifying the usefulness of the present analysis in the thermal design of device chips.
Published in:
Microwave and Wireless Components Letters, IEEE
(Volume:15
,
Issue:
5
)
Date of Publication: May 2005
- Page(s):
- 324 - 326
- ISSN :
- 1531-1309
- INSPEC Accession Number:
- 8482821
- Digital Object Identifier :
- 10.1109/LMWC.2005.847693
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 09 May 2005
- Issue Date :
- May 2005
- Sponsored by :
- IEEE Microwave Theory and Techniques Society
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