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A new single crystal silicon carbide MEMS fabrication process is developed using a proton-implantation smart-cut technique. A 6H-SiC layer with 1.3 μm thickness has been achieved over an oxidized silicon substrate using the proposed technique. TEM analyses of the silicon carbide thin film reveal single crystal characteristics, which is attractive for potential integration of MEMS devices with high-temperature microelectronics in the same structural layer for harsh environment applications. Implant-induced defect density in the silicon carbide can be substantially reduced to a negligible level through high-temperature annealing. Prototype single crystal 6H-SiC MEMS devices, such as resonators and actuators, have been successfully fabricated as demonstration vehicles for future harsh-environment micro-system implementation.