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Study of Pt/TiO2/SiC Schottky diode based gas sensor

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5 Author(s)
Kandasamy, S. ; Sch. of Electr. & Comput. Eng., RMIT Univ., Melbourne, Vic., Australia ; Trinchi, A. ; Wlodarski, W. ; Comini, E.
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Metal reactive oxide silicon carbide (MROSiC) is attractive for gas sensing applications in harsh, high temperature environments. We present the hydrogen and propene gas sensing performance of a Pt/TiO2/SiC device. This sensor has been employed as a Schottky diode, and is capable of operating at temperatures around 650 °C. The sensors were exposed to different concentrations of these analyte gases over the temperature range of 300 to 650 °C. The response was measured as the shift in voltage when a constant forward bias current 0.5 mA was applied. Voltage shifts of approximately 4.5 V for 1% hydrogen in nitrogen and up to 1 V for 1% hydrogen in synthetic air were observed. Largest responses were observed at operating temperature of 530 °C.

Published in:

Sensors, 2004. Proceedings of IEEE

Date of Conference:

24-27 Oct. 2004

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