Metal reactive oxide silicon carbide (MROSiC) is attractive for gas sensing applications in harsh, high temperature environments. We present the hydrogen and propene gas sensing performance of a Pt/TiO2/SiC device. This sensor has been employed as a Schottky diode, and is capable of operating at temperatures around 650 °C. The sensors were exposed to different concentrations of these analyte gases over the temperature range of 300 to 650 °C. The response was measured as the shift in voltage when a constant forward bias current 0.5 mA was applied. Voltage shifts of approximately 4.5 V for 1% hydrogen in nitrogen and up to 1 V for 1% hydrogen in synthetic air were observed. Largest responses were observed at operating temperature of 530 °C.
Published in:
Sensors, 2004. Proceedings of IEEE
Date of Conference: 24-27 Oct. 2004