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A 34-ns 16-Mb DRAM with controllable voltage down-converter

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14 Author(s)
Hidaka, H. ; Mitsubishi Electr. Corp., Hyogo, Japan ; Arimoto, K. ; Hirayama, K. ; Hayashikoshi, Masanori
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A high-speed 16-Mb DRAM with high reliability is reported. A multidivided column address decoding scheme and a fully embedded sense-amplifier driving scheme were used to meet the requirements for high speed. A low-power hybrid internal power supply voltage converter with an accelerated life-test function is also proposed and was demonstrated. A novel substrate engineering technology, a retrograded well structure formed by a megaelectronvolt ion-implantation process, provides a simple process sequence and high reliability in terms of soft error and latch-up immunity.

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Solid-State Circuits, IEEE Journal of  (Volume:27 ,  Issue: 7 )