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High-power singlemode CW operation of 1.5 μm-range quantum dot GaAs-based laser

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19 Author(s)
Karachinsky, L.Ya. ; A.F. Ioffe Physico-Tech. Inst., Russian Acad. of Sci., St. Petersburg, Russia ; Kettler, T. ; Gordeev, N.Yu. ; Novikov, I.I.
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Narrow ridge stripe lasers with metamorphic InAs/InGaAs quantum dots grown using molecular beam epitaxy on GaAs substrates emit in the 1.5 μm wavelength range demonstrating a differential quantum efficiency of about 50%, singlemode operation, and maximum continuous-wave power of 220 mW limited by thermal roll-over. Absence of beam filamentation is demonstrated up to the highest power levels studied.

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Electronics Letters  (Volume:41 ,  Issue: 8 )