Referenced Items are not available for this document.
Narrow ridge stripe lasers with metamorphic InAs/InGaAs quantum dots grown using molecular beam epitaxy on GaAs substrates emit in the 1.5 μm wavelength range demonstrating a differential quantum efficiency of about 50%, singlemode operation, and maximum continuous-wave power of 220 mW limited by thermal roll-over. Absence of beam filamentation is demonstrated up to the highest power levels studied.
Published in:
Electronics Letters
(Volume:41
,
Issue:
8
)
Date of Publication: 14 April 2005
- Page(s):
- 478 - 480
- ISSN :
- 0013-5194
- INSPEC Accession Number:
- 8385356
- Digital Object Identifier :
- 10.1049/el:20050536
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 16 May 2005
- Issue Date :
- 14 April 2005
- Sponsored by :
- Institution of Engineering and Technology
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