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A new method to measure temperature- and power-dependent thermal resistance of HBTs

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3 Author(s)
Menozzi, R. ; Dipt. di Ingegneria dell''Inf., Parma Univ., Italy ; Barrett, J. ; Ersland, P.

This paper introduced a new DC technique for the measurement of the thermal resistance of HBTs. The method is very simple, because it requires only standard IC-VCE measurements at different baseplate temperatures, and it is able to account for the dependence of the thermal resistance on both the base-plate temperature and the dissipated power. We have obtained and shown consistent results extracted from devices with emitter area ranging from 90 μm2 (1 finger) to 1080 μm2 (12 fingers).

Published in:

ROCS Workshop, 2004.[Reliability of Compound Semiconductors]

Date of Conference:

24 Oct. 2004