A new method to measure temperature- and power-dependent thermal resistance of HBTs

This paper introduced a new DC technique for the measurement of the thermal resistance of HBTs. The method is very simple, because it requires only standard I/sub C/-V/sub CE/ measurements at different baseplate temperatures, and it is able to account for the dependence of the thermal resistance on both the base-plate temperature and the dissipated power. We have obtained and shown consistent results extracted from devices with emitter area ranging from 90 /spl mu/m/sup 2/ (1 finger) to 1080 /spl mu/m/sup 2/ (12 fingers).