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1 GHz GaInAs:Fe photoconductive optical AND gate with approximately 100 fJ switching energy for time-division access fibre networks

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7 Author(s)
Desurvire, E. ; Crawford Hill Lab., AT&T Bell Labs., Holmdel, NJ, USA ; Tell, B. ; Kaminow, I.P. ; Brown-Goebeler, K.F.
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A high-speed, three-port optical AND gate based on GaInAs:Fe photoconductive switches operating at lambda =1.3 mu m is demonstrated. An electrical power contrast ratio of 12 dB is obtained in optical-to-electrical time-division demultiplexing of a 1 GHz signal bit sequence by a 333.3 MHz clock with optical pulse energies of 100 fJ.

Published in:

Electronics Letters  (Volume:25 ,  Issue: 2 )

Date of Publication:

19 Jan. 1989

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