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High-speed silicon electrooptic Modulator design

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2 Author(s)
Fuwan Gan ; Dept. of Electr. Eng. & Comput. Sci., Massachusetts Inst. of Technol., Cambridge, MA, USA ; Kartner, F.X.

An electrically driven Mach-Zehnder waveguide modulator based on high-index contrast silicon split-ridge waveguide technology and electronic carrier injection is proposed. The excellent optical and carrier confinement possible in high-index contrast waveguide devices, together with good thermal heat sinking and forward biased operation, enables high-speed modulation with small signal modulation bandwidths beyond 20 GHz, a Vπ times length figure of merit of VπL=0.5 V·cm and an insertion loss of about 4 dB. The modulator can be fabricated in a complementary metal-oxide-semiconductor compatible way.

Published in:

Photonics Technology Letters, IEEE  (Volume:17 ,  Issue: 5 )

Date of Publication:

May 2005

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