By Topic

High-speed silicon electrooptic Modulator design

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Fuwan Gan ; Dept. of Electr. Eng. & Comput. Sci., Massachusetts Inst. of Technol., Cambridge, MA, USA ; Kartner, F.X.

An electrically driven Mach-Zehnder waveguide modulator based on high-index contrast silicon split-ridge waveguide technology and electronic carrier injection is proposed. The excellent optical and carrier confinement possible in high-index contrast waveguide devices, together with good thermal heat sinking and forward biased operation, enables high-speed modulation with small signal modulation bandwidths beyond 20 GHz, a Vπ times length figure of merit of VπL=0.5 V·cm and an insertion loss of about 4 dB. The modulator can be fabricated in a complementary metal-oxide-semiconductor compatible way.

Published in:

Photonics Technology Letters, IEEE  (Volume:17 ,  Issue: 5 )