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Low-threshold operation of 1.34-μm GaInNAs VCSEL grown by MOVPE

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7 Author(s)
M. Yamada ; Syst. Devices Res. Labs., NEC Corp., Shiga, Japan ; T. Anan ; H. Hatakeyama ; K. Tokutome
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Low-threshold operation was demonstrated for a 1.34-μm vertical-cavity surface-emitting laser (VCSEL) with GaInNAs quantum wells (QWs) grown by metal-organic vapor-phase epitaxy. Optimizing the growth conditions and QW structure of the GaInNAs active layers resulted in edge-emitting lasers that oscillated with low threshold current densities of 0.87 kA/cm2 at 1.34 μm and 1.1 kA/cm2 at 1.38 μm, respectively. The VCSEL had a low threshold current of 2.8 mA and a lasing wavelength of 1.342 μm at room temperature and operated up to 60/spl deg/C.

Published in:

IEEE Photonics Technology Letters  (Volume:17 ,  Issue: 5 )