Low-threshold operation of 1.34-μm GaInNAs VCSEL grown by MOVPE

Low-threshold operation was demonstrated for a 1.34-μm vertical-cavity surface-emitting laser (VCSEL) with GaInNAs quantum wells (QWs) grown by metal-organic vapor-phase epitaxy. Optimizing the growth conditions and QW structure of the GaInNAs active layers resulted in edge-emitting lasers that oscillated with low threshold current densities of 0.87 kA/cm
²
at 1.34 μm and 1.1 kA/cm
²
at 1.38 μm, respectively. The VCSEL had a low threshold current of 2.8 mA and a lasing wavelength of 1.342 μm at room temperature and operated up to 60/spl deg/C.