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High performance MEMS RF inductors fabricated on thick oxide layers using a process platform so-called SiDeox (silicon deep etching and oxidation) technology are presented. Deep reactive ion etching (DRIE) was performed to form 20 μm deep trenches of 2 μm wide trenches and silicon beams in the silicon substrate. DRIE etched silicon wafer was then thermally oxidised in the thermal furnace to form 20 μm-thick SiO2. RF inductors were fabricated on this thick SiO2 with high quality factors and self-resonance frequency.