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High mobility C60 organic field-effect transistors

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3 Author(s)
N. J. Haddock ; Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA ; B. Domercq ; B. Kippelen

Organic field-effect transistors incorporating the electron transport material C60 as the active semiconductor have been fabricated under high vacuum conditions and tested in a nitrogen atmosphere at ambient pressure. The maximum field-effect mobility was found to be 0.65 cm2/Vs, comparable to the state-of-the-art value measured under ultra-high-vacuum conditions.

Published in:

Electronics Letters  (Volume:41 ,  Issue: 7 )