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Design method for broadband CMOS RF LNA

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4 Author(s)
Gaubert, J. ; L2MP UMR CNRS, Polytech ''Marseille, Marseille, France ; Egels, M. ; Pannier, P. ; Bourdel, S.

A design method for a broadband RF CMOS low noise amplifier (LNA) is presented. The shape of the transfer function fits the classical filtering response such as Butterworth or Tchebycheff. This method uses an input matching cell with only parallel LC resonators coupled with admittance inverters realised by series coupling capacitors. An LNA for the 7.2 to 8.6 GHz frequency band designed with this method in a 0.13 μm RF CMOS process shows a 3.9 dB noise figure with a voltage gain of 28 dB at 8 GHz with a power consumption of 3.9 mW and a surface consumption of 0.4 mm2.

Published in:

Electronics Letters  (Volume:41 ,  Issue: 7 )