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A highly integrated baseband stage, which adopts a new configuration for the wideband code-division multiple access (WCDMA) direct conversion receiver (DCR), is described. The baseband stage satisfies all requirements of the WCDMA DCR and consists of opamp-RC channel select filters and variable gain amplifiers with linear-in-dB gain control. It achieves a high dynamic range of 85 dB with ±1.5 dB accuracy over a temperature variation from -25 to 85°C, 16.5 nV/√Hz input-referred noise, +20 dBV out-of-band IIP3 and +70 dBV out of band IIP2. The baseband stage is fabricated using a 0.35 μm SiGe BiCMOS process and consumes a total current of 11 mA/CH from a 2.7 V supply.