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Active semiconductor components in satellites are sensitive to accumulated ionization radiation dose. Radiation dose and shielding estimations for electronic components are usually carried out using NASA models of space radiation particle flux. Accurate measurement of accumulated dose during the life of a satellite is essential for optimizing radiation shielding design for electronic components. Dosimeters were designed using radiation sensitive field-effect transistors (RADFETs) and accumulated dose at geostationary orbit was measured. Radiation dose as measured by these dosimeters with spherical aluminum shields are presented and compared with NASA model doses.