Cart (Loading....) | Create Account
Close category search window

Plasma enhanced chemical vapor deposition of silicon under relatively high pressure conditions

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Amanatides, E. ; Dept. of Chem. Eng., Univ. of Patras, Patras, Greece ; Lykas, B. ; Mataras, D.

A two-dimensional self-consistent model of highly-diluted SiH4 in H2 discharges used for the deposition of microcrystalline silicon thin films is presented. The promising high-pressure regime (1-10 torr), that has been shown experimentally to lead at high growth rates and high crystalline volume fraction, is examined. The main effects of the pressure increase on the power dissipation, the electron density, and the species distribution in the discharge are presented and discussed.

Published in:

Plasma Science, IEEE Transactions on  (Volume:33 ,  Issue: 2 )

Date of Publication:

Apr 2005

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.