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A two-dimensional self-consistent model of highly-diluted SiH4 in H2 discharges used for the deposition of microcrystalline silicon thin films is presented. The promising high-pressure regime (1-10 torr), that has been shown experimentally to lead at high growth rates and high crystalline volume fraction, is examined. The main effects of the pressure increase on the power dissipation, the electron density, and the species distribution in the discharge are presented and discussed.
Date of Publication: Apr 2005