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Plasma-surface interaction and surface diffusion during silicon-based thin-film growth

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4 Author(s)
Hoefnagels, J.P.M. ; Dept. of Appl. Phys., Eindhoven Univ. of Technol., Netherlands ; Langereis, E. ; Kessels, W.M.M. ; van de Sanden, M.C.M.

Insight into the interaction between plasma and the surface can be obtained from well-defined radical and ion beam studies using advanced surface diagnostics. Therefore, in this paper, a new ultrahigh vacuum setup is presented for a fundamental study of the plasma deposition process of hydrogenated amorphous silicon (a-Si:H). A first study of the surface diffusion process of plasma radicals is presented by visualizing the surface roughness evolution of the films as a function of bulk thickness and substrate temperature.

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Plasma Science, IEEE Transactions on  (Volume:33 ,  Issue: 2 )