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Monolithic integration of AlGaAs/GaAs MQW laser diode and GaAs MESFET grown on Si using selective regrowth

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3 Author(s)
Egawa, T. ; Dept. of Electr. & Comput. Eng., Nagoya Inst. of Technol., Japan ; Jimbo, T. ; Umeno, Masayoshi

The first monolithic integration of an AlGaAs/GaAs laser diode and a GaAs MESFET has been grown on an SiO/sub 2/ back-coated Si substrate using selective regrowth by metalorganic chemical vapor deposition (MOCVD). The selectively regrown GaAs MESFET, with a gate length of 2.5 mu m and gate width of 400 mu m, shows a good pinch-off characteristic, a transconductance of 88 mS/mm and a threshold voltage of -2.25 V. This is caused by using the SiO/sub 2/ back-coated Si substrate. The light output of the laser diode in the monolithically integrated device can be modulated by the MESFET.<>

Published in:

Photonics Technology Letters, IEEE  (Volume:4 ,  Issue: 6 )