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InGaAsP electroabsorption modulator for high-bit-rate EDFA system

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3 Author(s)
Suzuki, M. ; KDD R&D Labs., Saitama, Japan ; Tanaka, H. ; Matsushima, Yuichi

The total performance of an InGaAsP electroabsorption modulator was characterized. Low-driving voltage of 1.2-2.7 V, low fiber-to-fiber insertion loss of 8.4-7.8 dB, and small alpha -value of 0.1-0.4 were obtained in 40-nm-wide wavelength range from 1.53 to 1.57 mu m. Static and dynamic modulation characteristics showed small dependence on the polarization and the power level of input light. Successful applications of a packaged EA modulator to ultralong-distance Er-doped fiber amplifier systems were confirmed by 16000-4550-km transmission experiments at 2.5-10 Gb/s.<>

Published in:

Photonics Technology Letters, IEEE  (Volume:4 ,  Issue: 6 )