Referenced Items are not available for this document.
We present the results of a study on the impact of process parameters on the performance of strain enhanced pMOSFETs with recessed SiGe S/D. Recess depth, channel length, layout sensitivity, and their subsequent impact on strain and hole mobility are explored. Micro-Raman spectroscopy (μRS), process simulations, device simulations, and electrical results are presented. A 30% improvement in drive current is demonstrated.
Published in:
Electron Devices Meeting, 2004. IEDM Technical Digest. IEEE International
Date of Conference: 13-15 Dec. 2004
- Page(s):
- 1055 - 1058
- Print ISBN:
- 0-7803-8684-1
- INSPEC Accession Number:
- 8394525
- Digital Object Identifier :
- 10.1109/IEDM.2004.1419378
- Product Type:
- Conference Publications
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