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A ferroelectric-gate FET (FeFET) is significant for 1T FeRAM. Among fabricated Pt/SrBi2Ta2O9/(HfO2)x(Al2O3)1-x/Si FeFETs, we find that the optimum buffer-layer composition ratio, x, of HfO2 and Al2O3 exists around 0.75. A FeFET of x = 0.75 with high k buffer layer and low leakage current shows long data retention.
Date of Conference: 13-15 Dec. 2004