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Impact of oxygen vacancies on high-κ gate stack engineering

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4 Author(s)
Takeuchi, H. ; Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA ; Hiu Yung Wong ; Daewon Ha ; Tsu-Jae King

The impact of oxygen vacancies in Hf-based gate dielectrics is discussed. Generation of oxygen vacancies in HfO2 is thermodynamically driven and causes Si interfacial layer formation and gate Fermi-level pinning in MOS devices. Hence, it is necessary to prevent oxygen transport across both top and bottom gate-dielectric interfaces through careful design of material system and thermal processing steps.

Published in:

Electron Devices Meeting, 2004. IEDM Technical Digest. IEEE International

Date of Conference:

13-15 Dec. 2004