By Topic

Predictive compact modeling of NQS effects and thermal noise in 90nm mixed-signal/RF CMOS technology

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

8 Author(s)
Wei-kai Shih ; Technol. CAD, Intel Corp., Santa Clara, CA, USA ; Mudanai, S. ; Rios, R. ; Packan, P.
more authors

Predictive compact models have been developed to describe NQS effects and thermal noise in Intel's 90nm radio-frequency (RF) CMOS (Kuhn, et al., 2002). The physical approach enables modeling transistor performance from DC to RF with one single set of parameters. Quantum correction on classical induced-gate-noise model is observed for the first time in ultra-thin oxide technology.

Published in:

Electron Devices Meeting, 2004. IEDM Technical Digest. IEEE International

Date of Conference:

13-15 Dec. 2004