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Predictive compact models have been developed to describe NQS effects and thermal noise in Intel's 90nm radio-frequency (RF) CMOS (Kuhn, et al., 2002). The physical approach enables modeling transistor performance from DC to RF with one single set of parameters. Quantum correction on classical induced-gate-noise model is observed for the first time in ultra-thin oxide technology.
Date of Conference: 13-15 Dec. 2004