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Modulation of drain current by redox-active molecules incorporated in Si MOSFETs

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8 Author(s)
Gowda, Srivardhan ; Dept. of Electr. & Comput. Eng., North Carolina State Univ., Raleigh, NC, USA ; Mathur, Guru ; Qiliang Li ; Surthi, Shyam
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Redox-active molecular monolayers were incorporated in MOSFETs to modulate the device characteristics. The discrete molecular states were manifested in the drain current characteristics indicating the presence of distinct energy levels at room temperature.

Published in:

Electron Devices Meeting, 2004. IEDM Technical Digest. IEEE International

Date of Conference:

13-15 Dec. 2004