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Self-aligned carbon nanotube transistors with novel chemical doping

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5 Author(s)
J. Chen ; IBM T. J. Watson Res. Center, Yorktown Heights, NY, USA ; C. Klinke ; A. H. Afzali ; K. Chan
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We report an unconventional chemical p- and n- doping scheme utilizing novel materials and a charge transfer mechanism to obtain air-stable, self-aligned, unipolar carbon nanotube transistors. This scheme in addition to introducing the tunability of the threshold voltage Vth, increases the drive current 2-3 orders of magnitude, transforms CNFET from ambipolar to unipolar, suppresses minority carrier injection and yields an excellent Ion/Ioff ratio of 106.

Published in:

Electron Devices Meeting, 2004. IEDM Technical Digest. IEEE International

Date of Conference:

13-15 Dec. 2004