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High frequency S parameters characterization of back-gate carbon nanotube field-effect transistors

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5 Author(s)
Huo, X. ; Dept. of EEE, Hong Kong Univ. of Sci. & Technol., China ; Zhang, M. ; Chan, Philip C.H. ; Liang, Q.
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High frequency S parameters characterization up to 10 GHz for back-gate carbon nanotube field-effect transistors (CNFETs) was carried for the first time. The high frequency transmission properties of back-gate CNFETs were compared and analyzed at different gate bias voltages using a lumped element model.

Published in:
Electron Devices Meeting, 2004. IEDM Technical Digest. IEEE International

Date of Conference: 13-15 Dec. 2004

Page(s):
691 - 694
Print ISBN:
0-7803-8684-1
INSPEC Accession Number:
8394470
Digital Object Identifier :
10.1109/IEDM.2004.1419263
Product Type:
Conference Publications

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