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Carbon nanotubes for interconnect applications

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6 Author(s)
Kreup, F. ; Infineon Technol. AG, Munich, Germany ; Graham, A.P. ; Liebau, M. ; Duesberg, G.S.
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We briefly review the status of the application of carbon nanotubes (CNTs) for future interconnects and present results concerning possible integration schemes. Growth of single nanotubes at lithographically defined locations (vias) has been achieved which is a prerequisite for the use of CNTs as future interconnects. For the 20 nm node a current density of 5·108 A/cm2 and a resistance of 7.8 kΩ could be achieved for a single multi-walled CNT vertical interconnect.

Published in:

Electron Devices Meeting, 2004. IEDM Technical Digest. IEEE International

Date of Conference:

13-15 Dec. 2004