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Sub 30 nm multi-bridge-channel MOSFET (MBCFET) with metal gate electrode for ultra high performance application

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15 Author(s)
Eun-Jung Yoon ; Semicond. R&D Center, Samsung Electron., Yongin, South Korea ; Sung-Young Lee ; Sung-Min Kim ; Min-Sang Kimc
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We have successfully fabricated sub 30nm N+ poly and TiN gate MBCFET (multi-bridge-channel field effect transistor) both on SOI wafers and bulk-Si wafers. Using TiN metal gate and 20nm multi bridge channels, we achieved the drive current of 2.3mA/μm that is the largest drive current ever reported for pMOSFETs with excellent subthreshold swing of 75mV/dec, and drain induce barrier lowering (DIBL) of 36mV/V. Large Ion/Ioff ratio and excellent threshold voltage (Vt) distribution were obtained using TiN metal gate to eliminate channel ion implantation minimizing the mobility degradation and dopant fluctuation.

Published in:

Electron Devices Meeting, 2004. IEDM Technical Digest. IEEE International

Date of Conference:

13-15 Dec. 2004