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3D quantum modeling and simulation of multiple-gate nanowire MOSFETs

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6 Author(s)
M. Bescond ; Lab. Materiaux et Microelectronique de Provence, Marseille, France ; K. Nehari ; J. L. Autran ; N. Cavassilas
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The electronic transport in multiple-gate devices is theoretically investigated at ultimate cross-section channel limit by modeling ballistic nanowire MOSFET architectures. The electrical performances of these structures are compared as a function of their "equivalent gate number" and gate configuration. In this approach, the 3D Schrodinger-Poisson system is self-consistently solved and the ballistic transport is treated with the nonequilibrium Green's function formalism.

Published in:

Electron Devices Meeting, 2004. IEDM Technical Digest. IEEE International

Date of Conference:

13-15 Dec. 2004