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We discuss recent developments in our research on single carbon nanotube field-effect transistors and light emitting and detecting devices. Specifically, we show that by using either double gate devices, or selective charge-transfer doping, we can convert Schottky barrier CNTFETs into bulk-switched devices, ambipolar CNTFETs into unipolar devices, while at the same time enhance both the ON and OFF state device characteristics. Under ambipolar conditions CNTFETs can be used as light emitters via e-h recombination, while light irradiation of CNTFETs leads to photoconductivity. Thus, the CNTFET can be used as a high performance switch, a light source and a light detector.
Date of Conference: 13-15 Dec. 2004