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Performance comparison and channel length scaling of strained Si FETs on SiGe-on-insulator (SGOI)

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27 Author(s)
J. Cai ; IBM Semicond. R&D Center, T. J. Watson Res. Center, Yorktown Heights, NY, USA ; K. Rim ; A. Bryant ; K. Jenkins
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The scaling behavior of current drive enhancements in strained-silicon NFETs on SiGe-on-insulator (SGOI) is reported. SGOI NFET enhancement exhibits only moderate channel length dependence down to sub-50 nm regime, indicating strain-induced enhancement can be sustained in future technology nodes. This is contrary to some previous reports which suggested dramatic reduction of strain-induced NFET current enhancement with channel length scaling. A novel analysis technique was developed to account for the difference in self-heating in SGOI and SOI devices to enable intrinsic device performance comparison. Additive effects of biaxial strain from the Si/SiGe heterostructure and process-induced uniaxial stress are experimentally demonstrated for the first time.

Published in:

Electron Devices Meeting, 2004. IEDM Technical Digest. IEEE International

Date of Conference:

13-15 Dec. 2004