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Development of SAW pressure sensor using ZnO/Si structure

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5 Author(s)
A. Talbi ; Lab. de Phys. des Milieux Ionises et Applications, Univ. H. Poincare, Nancy, France ; F. Sarry ; L. Le Brizoual ; O. Elmazria
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SAW devices have been shown to be suitable for many sensor applications. One of these applications is the pressure sensor. In this study, we present our ZnO deposition process. We also investigate the performance of SAW pressure sensors formed with a ZnO/Si(001) structure. The pressure sensitivities of the Rayleigh mode as well as the Sezawa mode are studied as a function of normalized thickness (kh=2πhZnO/λ). The experimental results show an opposite strain effect in the ZnO layer and Si substrate. A theoretical approach was developed to show the particle displacement. For a low khZnO value, the ZnO and Si medium contribute to the sensor sensitivity. For higher khZnO values, the particle displacement is mainly confined in the ZnO layer. This confirmed the opposite behaviors of the sensitivity with the khZnO value. Enhancement of the SAW sensitivity is also presented by the development of a pressure membrane based on the developed device.

Published in:

Frequency Control Symposium and Exposition, 2004. Proceedings of the 2004 IEEE International

Date of Conference:

23-27 Aug. 2004