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Amorphous CNx:B thin films were fabricated on titanium coated ceramic substrate by using a new doping method of pulsed laser deposition, In which graphite target and BN target were alternatively used to be vaporized sources during deposition. As-deposited films were analyzed by x-ray diffraction (XRD), scanning electron microscopy (SEM), Fourier transform infrared (FTIR) spectroscopy, x-ray photoelectron spectroscopy (XPS) and Raman spectroscopy. XRD measurement shows that no any diffraction peaks on the spectrum. The FITR analysis of the sample suggests that the broad absorption band between 500 and 1700cm-1 is attributed to SP2C-C bonding, SP3C-N bonding, and silicon absorption band. Such infrared absorption feature could be further confirmed by Raman spectrum. The electron field emission characteristics of thin films were investigated. The turn-on field was 6.5 V /μn . The current density was 78μA/cm2 at an electric field of 1IV /μm.