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Characteristics of a double-barrier-emitter triangular-barrier optoelectronic switch

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6 Author(s)
Chen, Jing-Yuh ; Dept. of Electr. Eng., Nat. Cheng-Kung Univ., Tainan, Taiwan ; Guo, Der‐Feng ; Chen, Chun-Yuan ; Lai, Po-Hsien
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In this study, a triangular-barrier and a double-barrier structure were integrated to form a bi-directional switching device. In the structure center of the triangular barrier, a delta-doped (δ-doped) quantum well was inserted to enhance the carrier accumulation. Owing to the resonant tunneling through the double barrier and avalanche multiplication in the reverse-biased junction, N-shaped and S-shaped negative-differential-resistance (NDR) phenomena would occur in the current-voltage (I-V) characteristics under normal and reverse operation modes, respectively.

Published in:

Vacuum Electron Sources Conference, 2004. Proceedings. IVESC 2004. The 5th International

Date of Conference:

6-10 Sept. 2004