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38-GHz-band high-power MMIC amplifier module for satellites on board use

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8 Author(s)
M. Shigaki ; Fujitsu Ltd., Kawasaki, Japan ; S. Koike ; K. Nogatomo ; K. Kobayashi
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The design and development results of 38-GHz high-power MMIC amplifier modules for use in the solid-state power amplifier (SSPA) to be carried aboard Engineering Test Satellite VI in 1993 are presented. This amplifier will be used in millimeter-wave intersatellite communication experiments. For the development of this amplifier, high-power, highly reliable FETs with 0.25-μm-long gates were designed. The FET large-signal impedance was accurately measured using an improved load-pull method and MMIC transformers. The measurements were used to design two types of MMICs: one composed of two FET cells with 600-μm-wide gates and the other of four FET cells with 400-μm-wide gates. A two-stage amplifier package consisting of two of these MMICs that can be used at 38 GHz is also developed. A P o(1 dB) of 25 dBm and a gain of 11 dB are obtained. A 38-GHz test conducted during chip screening achieves a high production yield without circuits adjustment

Published in:

IEEE Transactions on Microwave Theory and Techniques  (Volume:40 ,  Issue: 6 )