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An 1.25 Gbit/s -29 dBm burst-mode optical receiver realized with 0.35 μm SiGe BiCMOS process using a PIN photodiode

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3 Author(s)
Chun-Chi Chen ; SoC Technol. Center, Ind. Technol. Res. Inst., Hsinchu, Taiwan ; Chia-Ming Tsai ; Li-Ren Huang

A 1.25Gbps high sensitivity burst-mode optical receiver is realized using TSMC 0.35 μm SiGe BiCMOS process. This burst-mode receiver uses PIN photodiode instead of expensive avalanche photodiode to achieve the sensitivity requirement of an OLT receiver in a PON system. With a 0.7 pF PIN photodiode, the measured optical sensitivity for 1310 nm light achieves -29 dBm at 1.25 Gbps under BER of 10-12. For burst-mode operation, the receiver provides fully differential output within 50 ns after the start of an optical burst.

Published in:

Circuits and Systems, 2004. Proceedings. The 2004 IEEE Asia-Pacific Conference on  (Volume:1 )

Date of Conference:

6-9 Dec. 2004