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Browse Journals & Magazines > Electron Devices, IEEE Transa ...> Volume:39 Issue:7 Help

Modeling submicrometer GaAs MESFETs using PISCES with an apparent gate-length-dependent velocity-field relation

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2 Author(s)
Fardi, H.Z. ; Dept. of Electr. & Comput. Eng., Colorado Univ., Boulder, CO, USA ; Hayes, R.E.

An empirical velocity-field relationship, based on Monte Carlo simulation, is integrated into the PISCES drift-diffusion simulation program in order to analyze short-gate GaAs MESFETs. The current-voltage characteristics are compared with 2D Monte Carlo simulation results on a 0.2 μm gate length and with measured I-V characteristics of a 0.32 μm gate-length GaAs MESFET. The comparison and the analysis made support the accuracy of the modified drift-diffusion model and show that it is computationally efficient for simulation of short-gate devices

Published in:
Electron Devices, IEEE Transactions on  (Volume:39 ,  Issue: 7 )

Date of Publication: Jul 1992

Page(s):
1778 - 1780
ISSN :
0018-9383
INSPEC Accession Number:
4215580
Digital Object Identifier :
10.1109/16.141251
Product Type:
Journals & Magazines
Date of Current Version :
06 August 2002
Issue Date :
Jul 1992
Sponsored by :
IEEE Electron Devices Society

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