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Improved drift in two-phase, long-channel, shallow buried-channel CCDs with longitudinally nonuniform storage-gate implants

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5 Author(s)
A. L. Lattes ; MIT Lincoln Lab., Lexington, MA, USA ; S. C. Munroe ; M. M. Seaver ; J. E. Murguia
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Two-phase buried-channel charge-coupled devices (CCDs) with a gradient in the storage wells, generated by a nonuniform channel doping parallel to the surface, were studied at room temperature and at 77 K. The built-in drift fields improve the charge transfer efficiency by more than an order of magnitude, consistently with two-dimensional simulations

Published in:

IEEE Transactions on Electron Devices  (Volume:39 ,  Issue: 7 )