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Browse Journals & Magazines > Electron Devices, IEEE Transa ...> Volume:39 Issue:7 Help

Cubic paraelectric (nonferroelectric) perovskite PLT thin films with high permittivity for ULSI DRAMs and decoupling capacitors

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2 Author(s)
Dey, Sandwip K. ; Dept. of Chem.-Bio & Mater. Eng., Arizona State Univ., Tempe, AZ, USA ; Lee, J.-J.

Polycrystalline paraelectric perovskite thin films in the Pb-La-Ti-O or PLT (28 mol.% La) system have been studied. Thin (0.5-μm) films were integrated onto 3-in Pt/Ti/SiO2/(100) Si wafers by the sol-gel processing technique. Low-field dielectric measurements yielded dielectric permittivity and loss tangent of 1400 and 0.015, respectively, while high-field Sawyer-Tower measurements (P-E) showed linear behavior up to 40 kV/cm, which approached saturation at 200 kV/cm. Pulse charging transient and current-voltage measurements indicated a high charge storage density (15.8 μC/cm2) and low leakage current density (0.50 μA/cm2) under a field of 200 kV/cm. The charging time for a 1-μm2 PLT capacitor at 200 kV/cm was estimated to be 0.1 ns. The preliminary data demonstrate that paraelectric PLT thin films have excellent potential for use in ULSI DRAMs and as decoupling capacitors

Published in:
Electron Devices, IEEE Transactions on  (Volume:39 ,  Issue: 7 )

Date of Publication: Jul 1992

Page(s):
1607 - 1613
ISSN :
0018-9383
INSPEC Accession Number:
4219369
Digital Object Identifier :
10.1109/16.141225
Product Type:
Journals & Magazines
Date of Current Version :
06 August 2002
Issue Date :
Jul 1992
Sponsored by :
IEEE Electron Devices Society

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