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Cubic paraelectric (nonferroelectric) perovskite PLT thin films with high permittivity for ULSI DRAMs and decoupling capacitors

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2 Author(s)
S. K. Dey ; Dept. of Chem.-Bio & Mater. Eng., Arizona State Univ., Tempe, AZ, USA ; J. -J. Lee

Polycrystalline paraelectric perovskite thin films in the Pb-La-Ti-O or PLT (28 mol.% La) system have been studied. Thin (0.5-μm) films were integrated onto 3-in Pt/Ti/SiO2/(100) Si wafers by the sol-gel processing technique. Low-field dielectric measurements yielded dielectric permittivity and loss tangent of 1400 and 0.015, respectively, while high-field Sawyer-Tower measurements (P-E) showed linear behavior up to 40 kV/cm, which approached saturation at 200 kV/cm. Pulse charging transient and current-voltage measurements indicated a high charge storage density (15.8 μC/cm2) and low leakage current density (0.50 μA/cm2) under a field of 200 kV/cm. The charging time for a 1-μm2 PLT capacitor at 200 kV/cm was estimated to be 0.1 ns. The preliminary data demonstrate that paraelectric PLT thin films have excellent potential for use in ULSI DRAMs and as decoupling capacitors

Published in:

IEEE Transactions on Electron Devices  (Volume:39 ,  Issue: 7 )