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Scanning probe microscopy techniques including scanning gate microscopy (SGM) and scanning thermal microscopy (SThM) have been used to investigate electron transport and energy dissipation mechanisms in single-walled carbon nanotube (CNT) electronic devices. An ultra thin (5-10 nm) layer of polystyrene was coated on the device to protect the CNT devices during thermal imaging. A first harmonic ac measurement SThM method has been developed to improve the signal-noise ratio. Our recent results reveal diffusive and dissipative charge transport in a semiconducting single-walled CNT at applied bias as low as 0.1 V. We have also observed uniform heat dissipation in a metallic single-walled carbon nanotube at applied biases above 0.4 V.