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Monte Carlo analysis of the space-charge effect in AlGaAs/GaAs ballistic collection transistors (BCTs) under high current injection

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3 Author(s)
H. Nakajima ; NTT LSI Lab., Kanagawa, Japan ; M. Tomizawa ; T. Ishibashi

AlGaAs/GaAs ballistic collection transistors (BCTs) are investigated by self-consistent Monte Carlo simulation, focusing on the space-charge effect in the collector region. In addition to the conventional BCT collector structure (i-p+-n+), modified collector structures which have n--p+-n + and p--p+-n+ doping profiles are examined. By taking account of the fact that the collector delay time is composed of transit time and capacitance charging time, it is shown that the n--p+-n+ collector structure is effective for the suppression of the base-widening effect (Kirk effect) compared to the i-p+-n+ or p- -p+-n+ structure. Donors in the n- layer compensate for the negative space charges produced by near-ballistic electrons. For a simulated BCT with an n--p +-n+ collector, the smaller collector capacitance charging time leads to improvement in current-gain cutoff frequency under high current injection

Published in:

IEEE Transactions on Electron Devices  (Volume:39 ,  Issue: 7 )