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Effects of resonant mode coupling on optical Characteristics of InGaN-GaN-AlGaN lasers

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3 Author(s)
G. A. Smolyakov ; Center for High Technol. Mater., Univ. of New Mexico, Albuquerque, NM, USA ; P. G. Eliseev ; M. Osinski

The phenomenon of resonant mode coupling is modeled and numerically investigated in InGaN-based multiple-quantum-well laser structures. It is shown that under resonant conditions, the internal mode coupling can lead to severe distortions of both near- and far-field characteristics. Taking into account the carrier-induced change of the modal effective index for the lasing mode, we show that the resonant internal mode coupling can result in a strongly nonlinear dependence of the modal gain on injection current, with possible region of negative differential modal gain.

Published in:

IEEE Journal of Quantum Electronics  (Volume:41 ,  Issue: 4 )