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Noise characterisation of Si/SiGe heterojunction bipolar transistors at microwave frequencies

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3 Author(s)
Schumacher, H. ; Ulm Univ., Germany ; Erben, U. ; Gruhle, A.

The microwave noise performance of Si/SiGe double-heterojunction bipolar transistors has been evaluated on-wafer, for frequencies ranging from 2 to 26 GHz. Noise figures of 0.6 dB at 2 GHz and 1.2 dB at 10 GHz were found to be among the lowest reported for bipolar transistors in general.

Published in:

Electronics Letters  (Volume:28 ,  Issue: 12 )